A detailed study on controlled synthesis and device integration of monolithic graphene-graphite structures

Graphene;graphite;Field Effect Transistor (FET);electronic devices;material synthesis;chemical vapor deposition (CVD);materials manufacturing;surface chemistry;Raman;Metallurgy

Chun, Sung Gyu ; Nam ; SungWoo

关键词: Graphene;    graphite;    Field Effect Transistor (FET);    electronic devices;    material synthesis;    chemical vapor deposition (CVD);    materials manufacturing;    surface chemistry;    Raman;    Metallurgy;   

Others  :  https://www.ideals.illinois.edu/bitstream/handle/2142/49801/Sung%20Gyu_Chun.pdf?sequence=1&isAllowed=y

美国|英语

来源: The Illinois Digital Environment for Access to Learning and Scholarship

【 摘 要 】

This thesis presents the controlled synthesis and the characterization of monolithic graphene and graphite through low pressure chemical vapor deposition (LPCVD) method. Selective patterning of heterogeneous metal catalysts enables a simultaneous and controlled growth of graphene and graphite with varying number of graphene layers. The number of graphene layers and graphite thickness can be controlled by using different catalytic metals or by modulating the thickness of source catalytic metal. Using the presented synthesis technique, we have successfully grown monolithic structure of graphene and graphite ranging from single to few hundred in number of graphene layers. Graphene based field-effect transistor (FET) is fabricated with monolithic graphene-graphite structures. Especially, superior mechanical flexibility of the fabricated graphene FET enables it to be transferred onto a variety of substrates, including soft materials. This thesis also explores the fabrication of crumpled three-dimensional (3D) graphene structure through thermally-activated shrinkage of the base substrate, which can be exploited as 3D biological sensor mechanism. A detailed analysis on synthesis and characterization of monolithic graphene-graphite structures is explained in detail.