Design of Strain-Engineered GeSn/GeSiSn Quantum Dots for Mid-IR Direct Bandgap Emission on Si Substrate

Nanoscale Research Letters

Bouraoui Ilahi¹  Reem Al-Saigh¹  Bassem Salem²  Mourad Baira³ 

[1] King Saud University Department of Physics and Astronomy, College of Sciences;Univ. de Grenoble Alpes, CNRS, CEA/LETI Minatec, LTM;University of Monastir Faculty of Sciences, Laboratory of Micro-Optoelectronic and Nanostructures;

关键词: GeSn;    GeSiSn;    Quantum dots;    Direct bandgap;    Mid-IR;   

DOI  :  10.1186/s11671-018-2587-1

来源: DOAJ

【 摘 要 】

Abstract Strain-engineered self-assembled GeSn/GeSiSn quantum dots in Ge matrix have been numerically investigated aiming to study their potentiality towards direct bandgap emission in the mid-IR range. The use of GeSiSn alloy as surrounding media for GeSn quantum dots (QD) allows adjusting the strain around the QD through the variation of Si and/or Sn composition. Accordingly, the lattice mismatch between the GeSn quantum dots and the GeSiSn surrounding layer has been tuned between − 2.3 and − 4.5% through the variation of the Sn barrier composition for different dome-shaped QD sizes. The obtained results show that the emission wavelength, fulfilling the specific QD directness criteria, can be successively tuned over a broad mid-IR range from 3 up to7 μm opening new perspectives for group IV laser sources fully integrated in Si photonic systems for sensing applications.

【 授权许可】

Unknown