A Physical Model for the Hysteresis in MoS2 Transistors

IEEE Journal of the Electron Devices Society

Franz Schanovsky¹  Yury Yu. Illarionov²  Michael Waltl²  Gerhard Rzepa²  Tibor Grasser²  Bernhard Stampfer²  Theresia Knobloch²  Marco M. Furchi³  Thomas Mueller³ 

[1] Global TCAD Solutions, Vienna, Austria;TU Wien, Institute for Microelectronics, Vienna, Austria;TU Wien, Institute for Photonics, Vienna, Austria;

关键词: MOSFET;    nanomaterials;    semiconductor device modeling;    hysteresis;    semiconductor device reliability;    two-dimensional materials;   

DOI  :  10.1109/JEDS.2018.2829933

来源: DOAJ

【 摘 要 】

Even though the hysteresis in the gate transfer characteristics of two-dimensional (2D) transistors is a frequently encountered phenomenon, the physics behind it are up to now only barely understood, let alone modeled. Here, we demonstrate that the hysteresis phenomenon can be captured accurately by a previously established non-radiative multiphonon model describing charge capture and emission events in the surrounding dielectrics. The charge transfer model is embedded into a drift-diffusion based TCAD simulation environment, which was adapted to 2D devices. Our modeling setup was validated against measurement data on a back-gated single-layer MoS₂ transistor with SiO₂ as a gate dielectric. We use the modeling approach to gain a thorough understanding of the hysteresis, which will help to control this problem in future devices.

【 授权许可】

Unknown