Gray Wolf Optimization-Based Modeling Technique Applied to GaN High Mobility Electron Transistors

IEEE Journal of the Electron Devices Society

Anwar Jarndal¹ 

[1] Electrical Engineering Department, University of Sharjah, Sharjah, UAE;

关键词: GaN HEMT;    gray Wolf optimization;    scattering parameter measurements;    semiconductor device modeling;    silicon carbide substrate;    Diamond substrate;   

DOI  :  10.1109/JEDS.2021.3119052

来源: DOAJ

【 摘 要 】

In this paper an improved Gray-Wolf-Optimization (GWO) based small-signal modeling is developed. The proposed method is demonstrated by modeling GaN High Electron Mobility Transistors (HEMTs) on SiC and Diamond substrates. The technique bases on engineering the optimization objective function to provide reliable values for the model parameters; while keeping a better fitting for the targeted measurements. The reliability of extraction has been further improved by using physical relevant condition to remove any unrealistic values during the optimization process. The modeling procedure was applied on 2x50- $\mu \text{m}$ , 8x150- $\mu \text{m}$ , 8x250- $\mu \text{m}$ and 16x250- $\mu \text{m}$ GaN HEMTs on SiC substrate in addition to 2x125- $\mu \text{m}$ and 4x125- $\mu \text{m}$ GaN HEMTs on Diamond substrate. Very good results were obtained for both technologies with an excellent fitting for the related measurements. The results also show the reliability of the developed technique and validate its applicability for small- and large-signal modeling applications.

【 授权许可】

Unknown