Bias-Dependence of Electroluminescence in AlGaN/GaN High-Electron-Mobility Transistors on SiC Substrate

IEEE Journal of the Electron Devices Society

卷:10

Yuji Ando¹  Qiang Ma²  Shiyo Urano²  Akio Wakejima²  Atsushi Tanaka³ 

[1] Department of Electronics, Nagoya University, Nagoya, Japan;

[2] Graduate School of Engineering, Tsukuri College, Nagoya Institute of Technology, Nagoya, Japan;

[3] Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya, Japan;

关键词: GaN;    HEMT;    electroluminescence;    electron trap;    current collapse;    electric field;   

DOI  :  10.1109/JEDS.2022.3163379

来源: DOAJ

【 摘 要 】

This paper investigates bias-dependence of electroluminescence (EL) in an AlGaN/GaN HEMT fabricated on a SiC substrate. The HEMT exhibited a low-intensity reddish EL at the gate electrode at a drain voltage (V_ds) of 30 V, which was confirmed with combination of a top-side view using a CMOS sensor camera and a back-side view using a silicon-intensified CCD. As V_ds was increased to 48 V, color change from low-intensity red to high-intensity white was accompanied with shift of the location from the gate to the drain edge. The changes in the EL are attributed to a shift of the high electric field from the gate to the drain electrode and a concentration of electric field near the drain edge.

【 授权许可】

Unknown