Modeling a Thick Hydrogenated Amorphous Silicon Substrate for Ionizing Radiation Detectors

Frontiers in Physics

卷:8

Michele Crivellari¹  Maurizio Boscardin¹  Matthew Large²  Jeremy Alexander Davis²  Bailey Thompson²  Marco Petasecca²  Daniele Passeri³  Andrea Scorzoni³  Giovanni Verzellesi⁴  Nicolas Wyrsch⁵  Alessandro Rossi⁶  Mauro Menichelli⁶  Mauro Piccini⁶  Maria Movileanu-Ionica⁶  Arianna Morozzi⁶  Livio Fanò⁶  Francesco Moscatelli⁷ 

[1] Centre for Materials and Microsystems, Fondazione Bruno Kessler, Trento, Italy;

[2] Centre for Medical Radiation Physics, University of Wollongong, Wollongong, NSW, Australia;

[3] Department of Engineering, University of Perugia, Perugia, Italy;

[4] Department of Sciences and Methods for Engineering, University of Modena and Reggio Emilia, Reggio Emilia, Italy;

[5] Institute of Microengineering, Ecole Polytechnique Fédérale de Lausanne (EPFL), Neuchâtel, Switzerland;

[6] Istituto Nazionale Fisica Nucleare - Sezione Perugia, Perugia, Italy;

[7] Istituto Officina dei Materiali (IOM), Italian National Research Council (CNR), Perugia, Italy;

[8] Trento Institute for Fundamental Physics and Applications (TIFPA), Istituto Nazionale Fisica Nucleare, Trento, Italy;

关键词: a-Si:H;    radiation hardness;    large area application;    radiation sensor;    high energy physics;   

DOI  :  10.3389/fphy.2020.00158

来源: DOAJ

【 摘 要 】

There is currently a renewed interest in hydrogenated amorphous silicon (a-Si:H) for use in particle detection applications. Whilst this material has been comprehensively investigated from a numerical perspective within the context of photovoltaic and imaging applications, the majority of work related to its application in particle detection has been limited to experimental studies. In this study, a material model to mimic the electrical and charge collection behavior of a-Si:H is developed using the SYNOPSYS©Technology Computer Aided Design (TCAD) simulation tool Sentaurus. The key focus of the model is concerned with the quasi-continuous defect distribution of acceptor and donor defects near the valence and conduction bands (tails states) and a Gaussian distribution of acceptor and donor defects within the mid-gap with the main parameters being the defect energy level, capture cross-section, and trap density. Currently, Sentaurus TCAD offers Poole-Frenkel mobility and trap models, however, these were deemed to be incompatible with thick a-Si:H substrates. With the addition of a fitting function, the model was able to provide acceptable agreement (within 10 nA cm−2) between simulated and experimental leakage current density for a-Si:H substrates with thicknesses of 12 and 30 μm. Additional transient simulations performed to mimic the response of the 12 μm thick device demonstrated excellent agreement (1%) with experimental data found in the literature in terms of the operating voltage required to deplete thick a-Si:H devices. The a-Si:H model developed in this work provides a method of optimizing a-Si:H based devices for particle detection applications.

【 授权许可】

Unknown