Defects in hydrogenated amorphous silicon created by intense pulsed illumination at low temperature and the decay of their density

6th International Conference on Optical, Optoelectronic and Photonic Materials and Applications 2014

Ogihara, C.^1 ; Nakayama, A.^1 ; Yamaguchi, K.^1 ; Morigaki, K.^2,3

Department of Applied Science, Yamaguchi University, Ube

755-8611, Japan^1

Department of Electrical-System Engineering, Hiroshima Institute of Technology, Miyake, Saeki-ku, Hiroshima

731-5193, Japan^2

Present Address: C-305, 2-12 Wakabadai, Inagi, Tokyo

206-0824, Japan^3

关键词: a-Si:H;    Decay time;    Intense pulsed light;    Low temperatures;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/619/1/012016/pdf
DOI  :  10.1088/1742-6596/619/1/012016

来源: IOP

【 摘 要 】

We present density of dangling bonds of silicon created in a-Si:H films by illumination of intense pulsed light at low temperature. The density of the photo-created dangling bonds decreases at room temperature with increasing time from illumination with a decay time estimated to be approximately 4.2 × 106s (48 days). The results are compared with the intensity and lifetime of defect PL in a-Si:H films measured at various time from the pulsed illumination.