Investigation of light-induced degradation of tandem photoconverters on a-Si:H/μc-Si:H

18th International Conference PhysicA.SPb

Titov, A.S.^1 ; Abramov, A.S.^1 ; Andronikov, D.A.^1 ; Emtsev, K.V.^2 ; Semenov, A.F.^1 ; Terukova, E.E.^2 ; Yakovlev, S.A.^1

Ioffe Institute, Saint-Petersburg, Russia^1

TF TE Ioffe RandD Center, Saint-Petersburg, Russia^2

关键词: a-Si:H;    Intrinsic layer;    Light fluxes;    Light-induced degradation;    Optimization of crystallization;    Photoconverters;    Photoinduced degradation;    Solar module;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/769/1/012038/pdf
DOI  :  10.1088/1742-6596/769/1/012038

来源: IOP

【 摘 要 】

Photo-induced degradation of tandem α-Si: H/μc-Si: H photoconverters under standard light flux densities of 1000 W/m2 (AM1.5G) have been investigated. Spectral and current-voltage characteristics of solar modules produced with standard and modified recipes are presented and analyzed. This research is dedicated to the optimization of crystallization level in intrinsic layer of lower (microcrystalline) cascade.