Contribution of ionic precursors to deposition rate of a-Si:H films fabricated by plasma CVD

26th Symposium on Plasma Sciences for Materials

物理学;材料科学

Toko, S.^1 ; Hashimoto, Y.^1 ; Kanemitu, Y.^1 ; Torigoe, Y.^1 ; Seo, H.^1 ; Uchida, G.^1 ; Kamataki, K.^1 ; Itagaki, N.^1 ; Koga, K.^1 ; Shiratani, M.^1

Graduate School of Information Science and Electrical Engineering, Kyushu University, 744 Motooka, Fukuoka, Nishi-Ku, 819-0395, Japan^1

关键词: a-Si:H;    DC bias;    Discharge plasma;    Downstream region;    Negative bias;    Negatively charged;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/518/1/012008/pdf
DOI  :  10.1088/1742-6596/518/1/012008

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

We have studied contribution of ionic precursors to deposition rate of a-Si:H films in the downstream region of a multi-hollow discharge plasma CVD reactor using a DC bias grid and QCMs. The deposition rate decreases from 1.1 to 0.93 by applying negative bias voltage to the bias grid. The ionic precursors contribute to 7% of the total deposition rate and the dominant ionic precursors are considered to be negatively charged clusters.