Si/SiC heterojunction lateral double-diffused metal oxide semiconductor field effect transistor with breakdown point transfer (BPT) terminal technology

Micro & nano letters

article

Baoxing Duan¹  Yunjia Huang¹  Jingyu Xing¹  Yintang Yang¹ 

[1] Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University

关键词: silicon;    semiconductor device models;    silicon compounds;    MOSFET;    elemental semiconductors;    semiconductor device breakdown;    wide band gap semiconductors;    semiconductor heterojunctions;    double-diffused metal oxide semiconductor field effect transistor;    breakdown point transfer terminal technology;    high critical electric field;    specific on-resistance;    Si-SiC heterojunction;    deep drain region;    breakdown voltage;    TCAD simulation;    Si lateral double-diffused metal oxide semiconductor;    Si-SiC LDMOS;    interfacial charges;    size 20.0 mum;    Si-SiC;   

DOI  :  10.1049/mnl.2019.0055

学科分类：计算机科学（综合）

来源: Wiley

【 摘 要 】

A novel silicon (Si) on silicon carbide (SiC) lateral double-diffused metal oxide semiconductor field effect transistor with deep drain region is proposed. Its main idea is transferring the breakdown point and utilising the high critical electric field of SiC material to suppress the curvature effect of the drain, which eventually alleviates the trade-off relationship between breakdown voltage (BV) and specific on-resistance ( R on,sp ). Through the TCAD simulation, the results show that the BV is significantly improved from 240 V for conventional Si lateral double-diffused metal oxide semiconductor (LDMOS) to 384 V for the proposed structure with the drift region length of 20 μm, increased by 60%. The figure-of-merit of the conventional Si LDMOS and the Si/SiC LDMOS are 2.04 and 4.26 MW/cm 2 , respectively. It indicates that the proposed structure has better performance than the Si counterpart. The influences of design parameters and interfacial charges on the device performance are also discussed in this work.

【 授权许可】

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