Schottky Barrier GaN FET Model Creation and Verification usingTCAD for Technology Evaluation and Design.

GaN;schottky;MOSFET;HFET

Ozbek, Ayse Merve ; Dr. Mark Johnson, Committee Member,Dr.Doug Barlage, Committee Chair,Dr. Mehmet C. Ozturk, Committee Member,Ozbek, Ayse Merve ; Dr. Mark Johnson ; Committee Member ; Dr.Doug Barlage ; Committee Chair ; Dr. Mehmet C. Ozturk ; Committee Member

University:North Carolina State University

关键词: GaN;    schottky;    MOSFET;    HFET;   

Others  :  https://repository.lib.ncsu.edu/bitstream/handle/1840.16/1668/etd.pdf?sequence=1&isAllowed=y

美国|英语

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