Mesoporous Silicon with Modified Surface for Plant Viruses and Their Protein Particle Sensing

Sensors

Yuriy Vashpanov¹  Jung Young Son² 

[1] Research Institute of Electrical and Computer Engineering, HIT Hanyang University, 17 Haengdang-dong, Seongdong-ku, 133-791, Seoul, Korea;School of Computer and Communication Engineering, Daegu University, 15 Naeri, Jinryang, Geyeongsan, Gyeongbuk 712714, Daegu, Korea

关键词: Biosensors;    Porous Silicon;    Plant Viruses;    MOSFET;    Double Gate;    current-voltage response;   

DOI  :  10.3390/s8106225

来源: mdpi

【 摘 要 】

Changes in electric parameters of a mesoporous silicon treated by a plasma chemical etching with fluorine and hydrogen ions, under the adsorption of NEPO (Nematodetransmitted Polyhedral) plant viruses such as TORSV (Tomato Ringspot Virus), GFLV (Grapevine Fan Leaf Virus) and protein macromolecule from TORSV particles are described. The current response to the applied voltage is measured for each virus particle to investigate the material parameters which are sensitive to the adsorbed particles. The peculiar behaviors of the response are modeled by the current-voltage relationship in a MOSFET. This model explains the behavior well and the double gate model of the MOSFET informs that the mesoporous silicon is a highly sensitive means of detecting the viruses in the size range less than 50 nm.

【 授权许可】

CC BY   
© 2008 by the authors; licensee Molecular Diversity Preservation International, Basel, Switzerland.