Analysis of Threshold Voltage Flexibility in Ultrathin-BOX SOI FinFETs †

Journal of Low Power Electronics and Applications

Kazuhiko Endo¹  Shinji Migita²  Yuki Ishikawa²  Takashi Matsukawa²  Shin-ichi O’uchi²  Junji Tsukada²  Wataru Mizubayashi²  Yukinori Morita²  Hiroyuki Ota²  Hitomi Yamauchi² 

[1] Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology; 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan;

关键词: FinFET;    SOI;    threshold;   

DOI  :  10.3390/jlpea4020110

来源: mdpi

【 摘 要 】

A threshold voltage (V_th) controllable multigate FinFET on a 10-nm-thick ultrathin BOX (UTB) SOI substrate have been investigated. It is revealed that the V_th of the FinFET on the UTB SOI substrate is effectively modulated thanks to the improved coupling between the Si channel and the back gate. We have also carried out analysis of the V_th controllability in terms of the size dependence such as the gate length (L_G) and the fin width (T_Fin).

【 授权许可】

CC BY   
© 2014 by the authors; licensee MDPI, Basel, Switzerland.