InGaAs Junctionless FinFETs With Self-Aligned Ni-InGaAs S/D

IEEE Journal of the Electron Devices Society

Po-Chun Chang¹  Simon M. Sze¹  Edward Yi Chang¹  Franky Juanda Lumbantoruan²  Chia-Hsun Wu²  Yen-Ku Lin²  Yueh-Chin Lin²  Chih-Jen Hsiao³ 

[1] Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan;Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan;Technology Development 4, Vanguard International Semiconductor Corporation, Hsinchu, Taiwan;

关键词: Junctionless (JL) transistor;    InGaAs nMOSFETs;    FinFET;    high-k dielectric;    Ni-InGaAs;    metal source/drain;   

DOI  :  10.1109/JEDS.2018.2859811

来源: DOAJ

【 摘 要 】

In this paper, the InGaAs junctionless (JL) FinFET with notable electrical performance is demonstrated. The device with $W_{\mathrm{ fin}}$ down to 20 nm, EOT of 2.1 nm, and $L_{G} = 60$ nm shows high $I_{\mathrm{ ON}} = 188~\mu \text{A}/\mu \text{m}$ at $V_{DD} = 0.5$ V and $I_{\mathrm{ OFF}} = 100$ nA/ $\mu \text{m}$ , $I_{\mathrm{ ON}}/I_{\mathrm{ OFF}} = 5 \times 10^{5}$ , DIBL = 106 mV/V and SS = 96 mV/dec. The device also exhibits a decent extrinsic transconductance ( $G_{\mathrm{ m}}$ ) of 1142 $\mu \text{S}/\mu \text{m}$ at $V_{\mathrm{ DS}}$ of 0.5 V. This high performance is attributed to the moderate doping concentration to ensure the channel carriers could be effectively depleted and the low $R_{\mathrm{ SD}}$ realized by self-aligned Ni-InGaAs alloy S/D. Furthermore, we also examine the temperature dependence of the main electrical parameters of the JL transistor.

【 授权许可】

Unknown