Simulation Study of 4H-SiC High-k Pillar MOSFET With Integrated Schottky Barrier Diode

IEEE Journal of the Electron Devices Society

Tony Chau¹  Peter T. Lai²  Wing Man Tang²  Ya Liang Zheng²  Johnny Kin On Sin³ 

[1] Alpha Power Solutions Limited, Hong Kong;Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong;Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong;

关键词: SiC MOSFET;    breakdown voltage;    high-k dielectric;    Schottky barrier diode;    split-gate;   

DOI  :  10.1109/JEDS.2021.3116715

来源: DOAJ

【 摘 要 】

A SiC high-k (HK) split-gate (SG) MOSFET is proposed with a Schottky barrier diode (SBD) integrated between the split gates, and is investigated by numerical TCAD simulation. Results show that it has the same breakdown voltage as the SiC high-k (HK) MOSFET with an optimized and practical k value of 30 for its insulation pillar, which results in the highest breakdown voltage (1857 V). The forward voltage (V_F) and reverse recovery charge (Q_RR) of the device are 0.9 V and 3.49 $\mu \text{C}$ /cm² respectively, much lower than those of the SiC HK MOSFET due to the SBD. Moreover, lower reverse transfer capacitance (C_RSS), smaller gate charge (Q_G), and smaller gate-to-drain charge (Q_GD) are achieved for the proposed device because of the split-gates, leading to much lower switching power loss when compared with the SiC HK MOSFET. All these results indicate that the SiC HK SG-MOSFET has promising potential in future power electronics applications.

【 授权许可】

Unknown