Behavior of SiC MOSFET under Short-Circuit during the On-State

2018 International Conference on Advanced Electronic Materials, Computers and Materials Engineering

材料科学;无线电电子学;计算机科学

Cui, Meiting^1 ; Li, Jinyuan^1 ; Du, Yujie^1 ; Zhao, Zhibin^2

State Key Laboratory of Advanced Power Transmission Technology, Global Energy Interconnection Research Institute of State Grid Corporation of China, Beijing

102209, China^1

State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, North China Electric Power University, Beijing

102206, China^2

关键词: Drain-source voltage;    Gate resistance;    Gate source voltage;    Miller capacitance;    On state;    Short-circuit characteristics;    SiC MOSFET;    SiC MOSFETs;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/439/2/022026/pdf
DOI  :  10.1088/1757-899X/439/2/022026

来源: IOP

【 摘 要 】

This paper presents behavior of SiC MOSFET under short-circuit during the on-state conditions. Although much research has been conducted on the short-circuit characteristics of the first type of SiC MOSFETs, no paper has reported the second type. A set of test benchs which can perform the second type of short-circuit are designed. Simulation by LTspice combined with experiments are conducted to evaluate the influences of several important parameters like miller capacitance, gate resistance, gate-source voltage, drain-source voltage on the second type of short-circuit characteristics of 1200 V/36 A SiC MOSFET.