Effect of geometry on the sensing mechanism of GaN Schottky barrier diode temperature sensor

IEICE Electronics Express

article

Liang He¹  Yiqiang Ni¹  Liuan Li²  Zhiyuan He³  Xiaobo Li⁴  Taofei Pu⁴  Jinping Ao⁴ 

[1] No.5 Electronics Research Institute of the Ministry of Industry and Information Technology;State Key Laboratory of Superhard Material, Jilin University;Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, No.5 Electronics Research Institute of the Ministry of Industry and Information Technology;Institute of Technology and Science, Tokushima University

关键词: GaN;    Schottky barrier diode;    temperature sensitivity;    geometry;   

DOI  :  10.1587/elex.18.20210332

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

To realize the in-situ temperature monitoring of power device, three kinds of Schottky barrier diodes (SBDs) are designed to reveal the effect of geometry on the temperature sensitivity. The current-voltage characteristics at different temperature demonstrate that all the circular-, finger-, and 8-finger- SBDs show good rectification. The forward voltage at a specific sub-threshold current level presents good linearity versus temperature. In addition, the deduced sensitivity presents no dependency on the geometry but is determined by the ideality factor and current density. The sensing mechanism of SBD sensor is explained by the thermionic emission model. Those results are beneficial to the design and fabrication of temperature sensor.

【 授权许可】

CC BY