Investigation of 5-nm-Thick Hf0.5Zr0.5O2 Ferroelectric FinFET Dimensions for Sub-60-mV/Decade Subthreshold Slope

IEEE Journal of the Electron Devices Society

Pin-Jui Chen¹  Dun-Bao Ruan¹  Yung-Chun Wu¹  Meng-Ju Tsai¹  Liu-Gu Chen¹  Po-Yang Peng²  Fu-Ju Hou³ 

[1] Department of Engineering and System Science, National Tsing Hua University, Hsinchu, Taiwan;National Synchrotron Radiation Research Center, Hsinchu, Taiwan;Taiwan Semiconductor Research Institute, Hsinchu, Taiwan;

关键词: Negative capacitance;    ferroelectric;    FinFET;    dimension effect;    hafnium zirconium oxide;    sub-60-mV/decade;   

DOI  :  10.1109/JEDS.2019.2942381

来源: DOAJ

【 摘 要 】

In this study, ferroelectric Fin field effect transistors (Fe-FinFET) with 5-nm-thick Hf0.5Zr0.5O2 (HZO) layers on silicon-on-insulator substrates were experimentally demonstrated. These devices had completed dimensions of single channel widths (WCh) from 20 nm to 1000 nm and gate lengths (LG) from 100 nm to 2000 nm. In experimental results, when WCh is smaller than 30 nm, and/or when LG > WCh, this proposed 5-nm-HZO Si Fe-FinFET guarantees SS <; 60 mV/decade. In addition, grazing incidence X-ray diffraction (GIXRD) through synchrotron radiation and nanobeam diffraction (NBD) were utilized to identify the crystallinity of the HZO. These Fe-FinFETs are highly favorable for ultra-low power and high-performance integrated-circuit applications.

【 授权许可】

Unknown