MgZnO-Based Negative Capacitance Transparent Thin-Film Transistor Built on Glass

IEEE Journal of the Electron Devices Society

Ming Lu¹  Yicheng Lu²  Guangyuan Li²  Yuxuan Li²  Fangzhou Yu²  Wen-Chiang Hong² 

[1] Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY, USA;Department of Electrical and Computer Engineering, Rutgers, The State University of New Jersey, Piscataway, NJ, USA;

关键词: Negative capacitance;    transparent electronics;    thin-film transistor;    subthreshold swing;   

DOI  :  10.1109/JEDS.2021.3108904

来源: DOAJ

【 摘 要 】

We demonstrate the first wide bandgap oxide based negative capacitance transparent thin-film transistor (NC-TTFT) built on glass. The Mg_0.03Zn_0.97O (MZO) semiconductor served as the channel layer and ferroelectric Ni_0.02Mg_0.15Zn_0.83O (NMZO) serves in the gate stack. The Al-doped ZnO (AZO) is employed as the transparent conductive oxide (TCO) for source and drain electrodes. The NC-TTFT on glass shows an average optical transmittance of 91 % in the visible spectrum. The subthreshold swing (SS) value is significantly reduced over the reference transparent thin-film transistor (TTFT) without a ferroelectric layer. The minimum SS value of the NC-TTFT reaches 17 mV/dec. With normally-off operation and high on/off current ratio of 107, this NC-TTFT on glass technology shows promising potential for wearable systems such as augmented reality (AR) smart glasses.

【 授权许可】

Unknown