High Electron Mobility Thin‐Film Transistors Based on Solution‐Processed Semiconducting Metal Oxide Heterojunctions and Quasi‐Superlattices

Advanced Science

Yen-Hung Lin²  Hendrik Faber²  John G. Labram²  Emmanuel Stratakis⁷  Labrini Sygellou³  Emmanuel Kymakis⁶  Nikolaos A. Hastas⁵  Ruipeng Li⁸  Kui Zhao⁴  Aram Amassian⁴  Neil D. Treat¹  Martyn McLachlan¹ 

[1] Department of Materials and Centre for Plastic Electronics, Imperial College London, London Royal School of Mines, London, UK;Department of Physics and Centre for Plastic Electronics, Blackett Laboratory, Imperial College London, London, UK;Institute of Chemical Engineering and High Temperature Processes (ICEHT), Foundation of Research and Technology Hellas (FORTH), Stadiou Strasse Platani, Patras, Greece;Materials Science and Engineering, Division of Physical Sciences and Engineering, King Abdullah University of Science and Technology, Thuwal, Saudi Arabia;Physics Department, Aristotle University of Thessaloniki, Thessaloniki, Greece;Center of Materials Technology and Photonics and Electrical Engineering Department, Technological Educational Institute (TEI) of Crete, Heraklion, Greece;Institute of Electronic Structure and Laser (IESL), Foundation for Research and Technology-Hellas (FORTH), Heraklion, Greece;Cornell High Energy Synchrotron Source, Wilson Laboratory, Cornell University, Ithaca, NY, USA

关键词: energy quantization;    metal oxides;    solution‐processed materials;    superlattices;    transistors;    transparent electronics;   

DOI  :  10.1002/advs.201500058

来源: Wiley

【 摘 要 】

Abstract

High mobility thin-film transistor technologies that can be implemented using simple and inexpensive fabrication methods are in great demand because of their applicability in a wide range of emerging optoelectronics. Here, a novel concept of thin-film transistors is reported that exploits the enhanced electron transport properties of low-dimensional polycrystalline heterojunctions and quasi-superlattices (QSLs) consisting of alternating layers of In₂O₃, Ga₂O_3, and ZnO grown by sequential spin casting of different precursors in air at low temperatures (180–200 °C). Optimized prototype QSL transistors exhibit band-like transport with electron mobilities approximately a tenfold greater (25–45 cm² V⁻¹ s⁻¹) than single oxide devices (typically 2–5 cm² V⁻¹ s⁻¹). Based on temperature-dependent electron transport and capacitance-voltage measurements, it is argued that the enhanced performance arises from the presence of quasi 2D electron gas-like systems formed at the carefully engineered oxide heterointerfaces. The QSL transistor concept proposed here can in principle extend to a range of other oxide material systems and deposition methods (sputtering, atomic layer deposition, spray pyrolysis, roll-to-roll, etc.) and can be seen as an extremely promising technology for application in next-generation large area optoelectronics such as ultrahigh definition optical displays and large-area microelectronics where high performance is a key requirement.

【 授权许可】

CC BY   
© 2015 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.