Design of class-E GaN HEMT power amplifier using elliptic low pass matching network with 86% efficiency

IEICE Electronics Express

Oguzhan Kizilbey¹ 

[1] The Scientific and Technological Research Council of Turkey

关键词: GaN HEMT;    high efficiency;    power amplifier;   

DOI  :  10.1587/elex.10.20120960

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(13)Cited-By(1)In this paper, a highly efficient prototype of Gallium Nitride high electron mobility transistor (GaN HEMT) power amplifier using elliptic low pass filter output network is proposed, fabricated and measured. A fifth-order elliptic low-pass filter network is designed and implemented for the output matching, which provides optimized fundamental and harmonic impedances. Simulation and experimental results show that a Class-E PA is realized from 2.7 to 2.9GHz with 10-W (40dBm) output power, 10dB gain and a measured efficiency of 86%, which is the highest reported today for such a frequency band and output power.

【 授权许可】

Unknown