Design and fabrication of ultra-wideband power amplifier based on GaN HEMT

IEICE Electronics Express

Hui Wang¹  Dandan Zhu¹  Shuai Chen¹  Guohua Liu¹  Kaikai Fan¹  Guoguo Yan¹  Zhiqun Cheng¹  Kai Wang¹  Steven Gao² 

[1] Key Lab. of RF Circuit and System, Education Ministry, Hangzhou Dianzi University;School of Engineering and Digital Arts, University of Kent

关键词: GaN HEMT;    ultra broadband;    power amplifier;    output power;   

DOI  :  10.1587/elex.12.20150703

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(15)The research of an ultra-broadband power amplifier based on TGF2023-2-02 GaN HEMT which operates in the frequency ranging from 3 GHz to 8 GHz, is presented in this paper. The transistor of GaN HEMT is modeled and a frequency compensation and multi-side impedance matching approach are adopted for broadband impedance matching of amplifier. And a fan shaped micro strip line is implemented in the input matching network to achieve the wideband higher gain features. The measured results show that the amplifier module provided more than 37 dBm output power with minimum small signal gain of 9.8 dB over 3�?8 GHz. The saturated output power is 38.3 dBm under DC bias of Vds = 28 V, Vgs = �?2.75 V at the frequency of 5 GHz.

【 授权许可】

Unknown