Accurate large-signal FET model tailored for switching-mode power amplifier design

IEICE Electronics Express

Geok-Ing Ng³  Lin-Sheng Liu²  Jian-Guo Ma¹ 

[1] School of Electronic Information Engineering, Tianjin University;School of Electronic Engineering, University of Electronic Science and Technology of China;School of Electrical and Electronic Engineering, Nanyang Technological University

关键词: power amplifier;    switching-mode;    GaN HEMT;    large-signal model;    parameter extraction;   

DOI  :  10.1587/elex.7.1672

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(11)A large-signal FET model for the simulation and design of switching-mode high-efficiency power amplifiers (PAs) is presented. The proposed nonlinear model is constructed by accurately characterizing the ON and OFF behaviors of the active FET device, along with its parameter extraction associated with the specific regions. The robustness of the model in predicting the switching-mode operation of on-wafer GaN-based HEMTs is demonstrated by experimental results. Moreover, the model has been employed for designing an inverse Class-F PA using a commercial high-power GaN HEMT. Good agreement between amplifier simulation and measurement proves the validity of the proposed large-signal model.

【 授权许可】

Unknown