Investigation of bilayer HfNx gate insulator utilizing ECR plasma sputtering

IEICE Electronics Express

Nithi Atthi¹  Shun-ichiro Ohmi¹ 

[1] Department of Electronics and Applied Physics, Tokyo Institute of Technology

关键词: bilayer;    ECR plasma sputtering;    hafnium nitride;    nitrogen concentration;    high-κ gate insulator;    interfacial layer;   

DOI  :  10.1587/elex.13.20160054

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(16)In this paper, we have investigated bilayer HfNx gate insulator utilizing ECR plasma sputtering especially for the electrical properties with metallic-phase HfN0.5 gate electrode which was formed by in-situ process. After PMA of 500°C/10 min in N2/4.9%H2 ambient, the bilayer of HfN1.3 (1.7 nm)/HfN1.1 (0.9 nm) gate insulator formed on Si(100) showed the EOT of 0.61 nm, leakage current density (@VFB �?1 V) of 5.5 × 10�?3 A/cm2 and density of interface states (Dit) of 5.5 × 1011 cm�?2 eV�?1. The n-MISFET with bilayer HfNx gate insulator exhibited saturation mobility (μsat) of 47 cm2/(V s), which higher than the device with directly deposited HfN1.3 gate insulator. HfNx interfacial layer (IL) with low nitrogen concentration was found to significantly improve the interface properties of HfNx gate stacks.

【 授权许可】

Unknown