Impact of Si surface roughness on MOSFET characteristics with ultrathin HfON gate insulator formed by ECR plasma sputtering

IEICE Electronics Express

Dae-Hee Han¹  Shun-ichiro Ohmi¹  Huiseong Han¹ 

[1] Department of Electronics and Applied Physics, Tokyo Institute of Technology

关键词: surface roughness;    Ar/4.9%H2 anneal;    HfON gate insulator;    ECR plasma sputtering;   

DOI  :  10.1587/elex.10.20130651

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(22)Cited-By(2)In this paper, the impact of Si surface roughness on metal oxide semiconductor field effect transistor (MOSFET) characteristics with ultrathin hafnium oxynitride (HfON) gate insulator formed by electron cyclotron resonance (ECR) sputtering was investigated. The surface roughness of Si substrate was reduced by Ar/4.9%H2 annealing utilizing conventional rapid thermal annealing (RTA) system. The obtained root-mean-square (RMS) roughness was 0.08nm (as-cleaned: 0.21nm). The HfON was formed by 2nm-thick HfN deposition followed by the Ar/O2 plasma oxidation. The electrical properties of HfON gate insulator were improved by the reduction of Si surface roughness. It was found that the current drivability of fabricated nMOSFETs was remarkably increased by reduction of Si surface roughness.

【 授权许可】

Unknown