Hafnium-nitride gate insulator formed by electron-cyclotron-resonance plasma sputtering

IEICE Electronics Express

Shun-ichiro Ohmi¹  Huiseong Han¹ 

[1] Department of Electronics and Applied Physics, Tokyo Institute of Technology

关键词: hafnium nitride;    hydrogen anneal;    ECR plasma sputtering;   

DOI  :  10.1587/elex.9.1329

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(19)Cited-By(6)We investigated nitrogen-rich HfN insulator on p-Si(100) substrate to prevent to form an interface layer with low dielectric constant by electron-cyclotron-resonance plasma sputtering method for the first time. The nitrogen concentration in the deposited HfN film was confirmed as approximately Hf:N = 1:1.2. Furthermore, the electrical properties of Al/HfN/p-Si(100) gate stack were improved by hydrogen anneal compared to nitrogen (N2) anneal. The EOT of 0.64nm with low leakage current of 6.2×10-4 A/cm2 (@ VFB -1V) was obtained. The results suggest that the effect of hydrogen anneal attributed to improve the electrical properties of HfN gate dielectric.

【 授权许可】

Unknown