Tailoring Properties of Hafnium Nitride Thin Film via Reactive Gas-Timing RF Magnetron Sputtering for Surface Enhanced-Raman Scattering Substrates

Crystals

卷:12

Wiwut Tanthapanichakoon¹  Nguentra Sucheewa²  Winadda Wongwiriyapan²  Jiti Nukeaw²  Wanwalee Auttasiri³  Nataporn Sowasod³  Theerayut Prataen³  Masatsugu Fujishige⁴  Michiko Obata⁵  Kenji Takeuchi⁵  Tossaporn Lertvanithphol⁶  Tuksadon Wutikhun⁷  Annop Klamchuen⁷  Saifon Kullyakool⁷ 

[1] Academy of Science, Royal Society of Thailand, Sanam Sua Pa, Dusit District, Bangkok 10300, Thailand;

[2] College of Materials Innovation and Technology, King Mongkut’s Institute of Technology Ladkrabang, Chalongkrung Rd., Ladkrabang, Bangkok 10520, Thailand;

[3] Division of Chemical Process Engineering Technology, Faculty of Engineering and Technology, King Mongkut’s University of Technology North Bangkok (Rayong Campus), Rayong 21120, Thailand;

[4] Global Aqua Innovation Center, Shinshu University, 4-17-1 Wakasato, Nagano 380-8553, Japan;

[5] Interdisciplinary Cluster for Cutting Edge Research, Research Initiative for Supra-Materials, Shinshu University, 4-17-1 Wakasato, Nagano 380-8553, Japan;

[6] National Electronics and Computer Technology Center (NECTEC), National Science and Technology Development Agency (NSTDA), Pathum Thani 12120, Thailand;

[7] National Nanotechnology Center (NANOTEC), National Science and Technology Development Agency (NSTDA), Pathum Thani 12120, Thailand;

关键词: hafnium nitride;    reactive gas timing;    sputtering;    surface-enhanced Raman spectroscopy;   

DOI  :  10.3390/cryst12010078

来源: DOAJ

【 摘 要 】

This study successfully demonstrated the tailoring properties of hafnium nitride (HfN) thin films via reactive gas-timing (RGT) RF magnetron sputtering for surface-enhanced Raman spectroscopy (SERS) substrate applications. The optimal RGT sputtering condition was investigated by varying the duration time of the argon and nitrogen gas sequence. The RGT technique formed thin films with a grain size of approximately 15 nm. Additionally, the atomic ratios of nitrogen and hafnium can be controlled between 0.24 and 0.28, which is greater than the conventional technique, resulting in a high absorbance in the long wavelength region. Moreover, the HfN thin film exhibited a high Raman signal intensity with an EF of 8.5 × 10⁴ to methylene blue molecules and was capable of being reused five times. A superior performance of HfN as a SERS substrate can be attributed to its tailored grain size and chemical composition, which results in an increase in the hot spot effect. These results demonstrate that the RGT technique is a viable method for fabricating HfN thin films with controlled properties at room temperature, which makes them an attractive material for SERS and other plasmonic applications.

【 授权许可】

Unknown