Memory cell using Modified Field Effect Diode

IEICE Electronics Express

Farshid Raissi¹  Mina Amirmazlaghani¹ 

[1] K. N. Toosi University of Technology, Electrical Engineering Department

关键词: Modified Field Effect Diode (M-FED);    SOI-MOSFET;    SRAM cell;   

DOI  :  10.1587/elex.6.1582

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(5)Cited-By(6)Using spice 9.3, we have modeled (I-V) characteristics of a Modified Field Effect Diode (M-FED) with gate length of 75nm and oxide thickness of 10nm. An SRAM cell (Register) has been designed with the simulated M-FED and has been compared to an SOI-MOSFET based circuit. Simulation results demonstrate that clock frequency applied to a memory cell which is designed with M-FED is more than 2 orders of magnitude larger than that of a comparable SOI-MOSFET, while the access time of the M-FED based memory cell is three orders of magnitude less than the comparable SOI-MOSFET.

【 授权许可】

Unknown