Switching characteristics of SiC JFET and Schottky diode in high-temperature dc-dc power converters

IEICE Electronics Express

Anuwat Jangwanitlert³  Tsuyoshi Funaki²  Juan C. Balda³  H. Alan Mantooth³  Sharmila Mounce³  Jeremy Junghans³  Takashi Hikihara²  Fred D. Barlow³  Tsunenobu Kimoto¹ 

[1] Kyoto University, Dept. of Electronic Science and Eng. Graduate school of Engineering;Kyoto University, Dept. of Electrical Eng.;University of Arkansas, Dept. of Electrical Eng.

关键词: SiC;    JFET;    Schottky diode;    high-temperature packaging;    400°C operation;    dc-dc buck converter;   

DOI  :  10.1587/elex.2.97

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(8)Cited-By(10)This paper reports on SiC devices operating in a dc-dc buck converter under extremely high ambient temperatures. To this end, the authors packaged SiC JFET and Schottky diodes in thermally stable packages and built a high-temperature inductor. The converter was tested at ambient temperatures up to 400°C. Although the conduction loss of the SiC JFET increases slightly with increasing temperatures, the SiC JFET and Schottky diode continue normal operation because their switching characteristics show minimal change with temperature. This work further demonstrates the suitability of the SiC devices for high-temperature power converter applications.

【 授权许可】

Unknown