Experimental Study on Mitigation of Lifetime-Limiting Dielectric Cracking in Extreme Temperature 4H-SiC JFET Integrated Circuits

Spry, D J ; Neudeck, P G ; Chang, Carl W

关键词: DIELECTRICS;    JFET;    HIGH TEMPERATURE;    PASSIVITY;    CRACKS;    CHIPS;    SILICON NITRIDES;    INTEGRATED CIRCUITS;    DURABILITY;   

RP-ID  :  GRC-E-DAA-TN73613

学科分类：物理（综合）

美国|英语

来源: NASA Technical Reports Server

【 摘 要 】

While NASA Glenn Research Center's "Generation 10" 4H-SiC Junction Field Effect Transistor (JFET) integrated circuits (ICs) have uniquely demonstrated 500 °C electrical operation for durations of over a year, this experimental work has also revealed that physical cracking of chip dielectric passivation layers ultimately limits extreme-environment operating lifetime [1-3]. The prevention of such dielectric passivation cracks should therefore improve IC high temperature durability and yield, leading to more beneficial technology adoption into aerospace, automotive, and energy systems. This report describes Generation 10.2, 11.1, and 11.2 die tested under unbiased and unpackaged accelerated age testing at 500 °C, 600 °C, 720 °C, and 800 °C in air-atmosphere ovens for 100- and 200-hour duration. Additional samples were separately subjected to 10 thermal cycles between the same high temperatures (with 10-hour high-temperature soak each cycle) and 50 °C. It is shown that having two stoichiometric Si3N4 layers in the interconnect dielectric stack substantially decreases the amount of dielectric cracking observed following these oven tests.