Experimental Study on Mitigation of Lifetime-Limiting Dielectric Cracking in Extreme Temperature 4H-SiC JFET Integrated Circuits

Spry, David J ; Neudeck, Philip G ; Chang, Carl W

关键词: AEROSPACE SYSTEMS;    AUTOMOBILES;    CRACKS;    DIELECTRICS;    DURABILITY;    INTEGRATED CIRCUITS;    JFET;    PASSIVITY;    TRANSISTOR CIRCUITS;   

RP-ID  :  GRC-E-DAA-TN73664

学科分类：物理（综合）

美国|英语

来源: NASA Technical Reports Server

【 摘 要 】

While NASA Glenn Research Center's "Generation 10" 4H-SiC Junction Field Effect Transistor (JFET) integrated circuits (ICs) have uniquely demonstrated 500°C electrical operation for durations of over a year, this experimental work has also revealed that physical cracking of chip dielectric passivation layers ultimately limits extreme-environment operating lifetime [1-3]. The prevention of such dielectric passivation cracks should therefore improve IC high temperature durability and yield, leading to more beneficial technology adoption into aerospace, automotive, and energy systems.