Reliability Concerns for Flying SiC Power MOSFETs in Space

Galloway, K F ; Witulski, A F ; Schrimpf, R D ; Sternberg, A L ; Ball, D R ; Javanainen, A ; Reed, R A ; Sierawski, B D ; Lauenstein, J-M

关键词: RELIABILITY;    SILICON CARBIDES;    FIELD EFFECT TRANSISTORS;    METAL OXIDE SEMICONDUCTORS;    MTBF;    ELECTRIC POTENTIAL;    POWER CONVERTERS;    HIGH VOLTAGES;    HIGH TEMPERATURE;    FAILURE;    SINGLE EVENT UPSETS;    HEAVY IONS;    DIELECTRICS;   

RP-ID  :  GSFC-E-DAA-TN65899,GSFC-E-DAA-TN54861

学科分类：电子与电气工程

美国|英语

来源: NASA Technical Reports Server

【 摘 要 】

SiC power MOSFETs are space-ready in terms of typical reliability measures. However, single event burnout (SEB) often occurs at voltages 50% or lower than specified breakdown. Data illustrating burnout for 1200 V devices is reviewed and the space reliability of SiC MOSFETs is discussed.