Mechanisms of Heavy Ion-Induced Single Event Burnout in 4H-SiC Power MOSFETs

Mcpherson, Joseph A ; Hitchcock, Collin ; Chow, T Paul ; Ji, Wei ; Woodworth, Andrew A

关键词: DOPED CRYSTALS;    ELECTRIC FIELDS;    ELECTRIC POTENTIAL;    FAILURE ANALYSIS;    FIELD EFFECT TRANSISTORS;    HEAVY IONS;    METAL OXIDE SEMICONDUCTORS;    PLASMAS (PHYSICS);    SILICON CARBIDES;    SUBSTRATES;    SWITCHING;   

RP-ID  :  GRC-E-DAA-TN73587

学科分类：物理（综合）

美国|英语

来源: NASA Technical Reports Server

【 摘 要 】

This describes the mechanisms behind the failure of 4H-SiC Power MOSFETs when struck by a heavy ion. The modeled device is designed to simulate a commercially available 1200 V power MOSFET and the ion simulated is a silver ion with a Linear Energy Transfer of 46 MeV-cm2/mg commonly used in single event effect (SEE) testing. The device is shown in simulation to fail near 500 V, which is in close agreement to experiments. These simulations go to show that the failure of SiC MOSFET occurs near the interface between the epi and substrate layers due to the rapid increase of the electric field in that region and destruction of the device from impact ionization. From this, two designs were proposed and investigated that would help to mitigate the electric field in these regions and improve the device's tolerance to single-event burnout (SEB). The new designs increased the voltage at which SEB occurs from 500 V to over 900 V and increased the Ron,sp by only 5%.