Reliability Concerns for Flying SiC Power MOSFETs in Space

Galloway, K F ; Witulski, A F ; Schrimpf, R D ; Sternberg, A L ; Ball, D R ; Javanainen, A ; Reed, R A ; Sierawski, B D ; Lauenstein, J-M

关键词: ACCELERATED LIFE TESTS;    BURNOUT;    COMPONENT RELIABILITY;    ELECTRONIC EQUIPMENT;    FIELD EFFECT TRANSISTORS;    METAL OXIDE SEMICONDUCTORS;    SEMICONDUCTORS (MATERIALS);    SILICON CARBIDES;    STRUCTURAL FAILURE;    TIME DEPENDENCE;    DEGRADATION;    DIELECTRIC PROPERTIES;    ELECTRIC POTENTIAL;    FAILURE ANALYSIS;    LOW RESISTANCE;    REFRACTORY MATERIALS;    THERMAL CONDUCTIVITY;   

RP-ID  :  GSFC-E-DAA-TN54858,GSFC-E-DAA-TN65884

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来源: NASA Technical Reports Server

【 摘 要 】

SiC power MOSFETs are space-ready in terms of typical reliability measures. However, single event burnout (SEB) often occurs at voltages 50% or lower than specified breakdown. Data illustrating burnout for 1200 V devices is reviewed and the space reliability of SiC MOSFETs is discussed.