Getting SiC Power Devices Off the Ground: Design, Testing, and Overcoming Radiation Threats

Lauenstein, Jean-Marie

关键词: SILICON CARBIDES;    JFET;    METAL OXIDE SEMICONDUCTORS;    HEAVY IONS;   

RP-ID  :  GSFC-E-DAA-TN59752

学科分类：电子与电气工程

美国|英语

来源: NASA Technical Reports Server

【 摘 要 】

Heavy-ion radiation effects knowledge across SiC power devices is examined and insights for more rugged designs and appropriate test methods geared toward space applications are extracted. The conclusions drawn are supported by recent publicly reported heavy-ion test results of a modified SiC MOSFET design.