A self-biasing class-E power amplifier for 5-GHz constant envelope modulation system

IEICE Electronics Express

Daisuke Kanemoto¹  Haruichi Kanaya¹  Ramesh K. Pokharel²  Yuki Yamashita¹  Keiji Yoshida¹ 

[1] Graduate School of Information Sciences and Electrical Engineering, Kyushu University;Center for Japan-Egypt Cooperation in Science and Technology, Kyushu University

关键词: power amplifier;    class-E;    self-biasing;    CMOS;    power-added efficiency;    fully integrated;   

DOI  :  10.1587/elex.10.20130174

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(8)This paper describes the design of 5-GHz fully integrated self-biasing power amplifier (PA) for wireless transmitter applications in a 0.18-µm CMOS technology. The proposed class-E PA employs the cascode topology with a self-biasing technique to reduce device stress. Three cascaded class-D driver amplifiers are used to actualize the sharp switching at the class-E power stage. All device components are integrated on chip and the chip area is 1.0×1.3mm2. The measurement results indicate that the PA delivers 16.4dBm output power and 35.4% power-added efficiency with 2.3V power supply voltage into a 50Ω load.

【 授权许可】

Unknown