A Compact Transformer-Based E-Band CMOS Power Amplifier with Enhanced Efficiencies of 15.6% PAE1dB and 6.5% PAE at 6 dB Power Back-Off

Electronics

Nan Jiang¹  Xusheng Tang²  Youming Zhang²  Fengyi Huang²  Zhennan Wei³ 

[1] S-TEK Research Center, Shanghai 201203, China;School of Cyber Science and Engineering, Southeast University, Nanjing 210096, China;School of Information Science and Engineering, Southeast University, Nanjing 210096, China;

关键词: CMOS;    E-band;    power amplifier;    transformer-based matching network;   

DOI  :  10.3390/electronics11111679

来源: DOAJ

【 摘 要 】

This paper presents a compact E-band power amplifier (PA) implemented in a 40 nm CMOS process. The neutralization technique is adopted to improve reverse isolation, stability and power gain. The linearity of the PA is improved by operating the output stage in the deep class-AB region. Transformer-based matching networks (TMNs) are used for impedance transformation, and optimized for output power and efficiency. At 81 GHz, the presented PA achieves a maximum output 1 dB compressed power (P_1dB) of 11.2 dBm and a saturated output power (P_sat) of 12.7 dBm with 1 V supply. The power-added efficiencies at P_1dB (PAE_1dB) and 6 dB power back-off (PBO) are 15.6% and 6.5%, respectively.

【 授权许可】

Unknown