A 14.3% PAE parallel class-A and AB 60GHz CMOS PA

IEICE Electronics Express

Kenichi Okada¹  Kota Matsushita¹  Akira Matsuzawa¹  Ning Li¹ 

[1] Department of Physical Electronics, Tokyo Institute of Technology

关键词: millimeter wave;    power amplifier;    CMOS;   

DOI  :  10.1587/elex.8.1071

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(4)At 60GHz, it becomes difficult to achieve a high power added efficiency (PAE) and large output power for CMOS power amplifier (PA). A parallel class-A and AB pseudo Doherty PA is designed in CMOS 65nm process to obtain a high PAE and large output power. The PA achieves a 9.8-dB gain at 60GHz. The measured large signal results show that a maximum power added efficiency (PAE) of 14.3% and 12.0% at 1dB compression point are realized. The chip consumes 45∼58mW power from a 1.2-V supply voltage. The chip area is 0.6mm2 including pads.

【 授权许可】

Unknown