140GHz CMOS amplifier with group delay variation of 10.2ps and 0.1dB bandwidth of 12GHz

IEICE Electronics Express

Kyoya Takano²  Mizuki Motoyoshi²  Minoru Fujishima²  Ryuichi Fujimoto¹ 

[1] ELP R&D Dept. Semiconductor Technology Academic Research Center (STARC);Graduate School of Advanced Sciences of Matter, Hiroshima University

关键词: millimeter wave;    CMOS;    wideband;    amplifier;    group delay;   

DOI  :  10.1587/elex.8.1192

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(8)Cited-By(2)A 140GHz CMOS wideband amplifier is proposed with the low group delay variation required to achieve a high-speed D-band wireless receiver. The amplifier is fabricated by the standard 1P12M 65nm CMOS process. From measurement, the gain is 10dB with a group delay variation of 10.2ps. The 0.1dB bandwidth, used as the figure of merit of the gain flatness, is 12GHz, whereas the generally used 3dB bandwidth is 27.6GHz. The power consumption is 57.1mW with a supply voltage of 1.2V.

【 授权许可】

Unknown