A wideband high efficiency V-band 65 nm CMOS power amplifier with neutralization and harmonic controlling

IEICE Electronics Express

Ying Liu¹  Dong Chen¹  Zhengdong Jiang¹  Chenxi Zhao¹  Kai Kang¹  Quan Xue²  Shum Kam Man² 

[1] School of Electronic Engnieering, University of Electronic Science and Technology of China;State Key Laboratory of Millimeter Waves, Department of Electronic Engineering, City University of Hong Kong

关键词: power amplifier;    transformer;    CMOS;   

DOI  :  10.1587/elex.14.20171110

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

A wideband high-efficiency V-band CMOS power amplifier (PA) is proposed in this paper. Neutralization technique is used to reduce the Miller effect and improve the power gain. A wideband on-chip transformer is used to adjust the transistors’ voltage waveform to improve the PAE performance. The PA works from 51 GHz to 64 GHz with 13 GHz absolute bandwidth and 22.6% relative bandwidth. The output power reaches 14.9 dBm with 16.3% peak PAE. The circuit is designed in a 65 nm CMOS technology.

【 授权许可】

CC BY