Recent progress and prospects of terahertz CMOS

IEICE Electronics Express

Minoru Fujishima¹  Shuhei Amakawa¹ 

[1] Graduate School of Advanced Sciences of Matter, Hiroshima University

关键词: CMOS;    integrated circuits;    millimeter-wave;    terahertz;   

DOI  :  10.1587/elex.12.20152006

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(29)Cited-By(1)Recent progress and prospects of terahertz CMOS integrated circuits is reviewed. The development of terahertz CMOS is somewhat different from the conventional digital and RF CMOS evolution, in that it is not fueled as much by technology scaling. Rather, the key enablers are progress in high-frequency device characterization and modeling techniques and also in design techniques near transistor’s active operation limit, fmax.

【 授权许可】

Unknown