Theoretical study in carrier mobility of two-dimensional materials

2017 2nd International Seminar on Advances in Materials Science and Engineering

Huang, R.^1

Jilin University, Changchun Jilin, China^1

关键词: Acoustic-phonon scattering;    Anisotropic material;    Deformation potential theory;    Device performance;    High carrier mobility;    Isotropic materials;    Two Dimensional (2 D);    Two-dimensional materials;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/231/1/012116/pdf
DOI  :  10.1088/1757-899X/231/1/012116

来源: IOP

【 摘 要 】

Recently, the theoretical prediction on carrier mobility of two-dimensional (2D) materials has aroused wild attention. At present, there is still a large gap between the theoretical prediction and the device performance of the semiconductor based on the 2D layer semiconductor materials such as graphene. It is particularly important to theoretically design and screen the high-performance 2D layered semiconductor materials with suitable band gap and high carrier mobility. This paper introduces some 2D materials with fine properties and deduces the formula for mobility of the isotropic materials on the basis of the deformation potential theory and Fermic golden rule under acoustic phonon scattering conditions, and then discusses the carrier mobility of anisotropic materials with Dirac cones. We point out the misconceptions in the existing literature and discuss the correct ones.