The main scattering mechanisms in Single-side modulation doped square quantum wells

41st Vietnam National Conference on Theoretical Physics

Hai, Tran Thi^1 ; Dung, Nguyen Thi^1 ; An, Nguyen Manh^1

Faculty of Natural Science, Hong Duc University, Thanh Hoa City, Viet Nam^1

关键词: Acoustic phonons;    Acoustic-phonon scattering;    Deformation potential;    Mobility dependences;    Piezoelectric couplings;    Scattering mechanisms;    Square quantum wells;    Transport of carriers;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/865/1/012004/pdf
DOI  :  10.1088/1742-6596/865/1/012004

来源: IOP

【 摘 要 】

We present a theory of the transport of carrier confined in the conduction band of a single-side modulation doped square quantum wells. Beside the well-known the scattering mechanisms such as surface roughness (SR), remote impurities (RI), and misfit deformation potential (DP), the theory induces acoustic phonon due to the deformation potential and acoustic phonon due to the piezoelectric coupling. In the result, we prove that acoustic phonon scattering has revealed very large mobility values. We have also consider acoustic-phonon partial mobility dependence on temperature for single-side modulation doped square quantum wells.