The deformation-potential scattering and alloy disorder scattering in donor-acceptor pHEMT heterostructures

7th International Conferences on Physics and Technology of Nanoheterostructure Microwave Electronics: Mokerov Readings 2016;8th International Conferences on Physics and Technology of Nanoheterostructure Microwave Electronics: Mokerov Readings 2017

Yu Protasov, D.^1^2 ; Bakarov, A.K.^1 ; Toropov, A.I.^1 ; Zhuravlev, K.S.^1^3

Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Lavrentiev avenue 13, Novosibirsk

630090, Russia^1

Novosibirsk State Technical University, K.Marx avenue 20, Novosibirsk

630073, Russia^2

Novosibirsk State University, Pirogov street 2, Novosibirsk

630090, Russia^3

关键词: Absolute values;    Alloy disorder scattering;    Deformation potential;    Donor acceptors;    Mole fraction;    Temperature dependencies;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/475/1/012033/pdf
DOI  :  10.1088/1757-899X/475/1/012033

来源: IOP

【 摘 要 】

The increase in the indium mole fraction in the quantum well of pHEMT heterostructures with donor-acceptor doping causes an increase in the 2DEG concentration from 2.2• 1012 cm-2 to 3.9• 1012 cm-2 and a decrease in mobility from 7900 cm2V-1s-1 to 7500 cm2V-1s-1 at room temperature. The temperature dependencies of 2DEG mobility show that the deformation potential scattering grows at increment of indium mole fraction in quantum well. Absolute values of the deformation potential are approximately two times smaller than the widely used values and increases with increasing of indium mole fraction.