Properties of intensive defect-related band in photoluminescence spectra of heavily doped AlxGa1-xN:Si layers

33rd International Conference on the Physics of Semiconductors

Osinnykh, I.V.^1,3 ; Malin, T.V.^1 ; Plyusnin, V.F.^2,3 ; Zhuravlev, K.S.^1,3

Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Lavrentieva av. 13, Novosibirsk

630090, Russia^1

Voevodsky Institute of Chemical Kinetics and Combustion, Siberian Branch, Russian Academy of Sciences, Institutskaya 3, Novosibirsk

630090, Russia^2

Novosibirsk State University, Pirogova 2, Novosibirsk

630090, Russia^3

关键词: Defect-related bands;    Donor acceptors;    Free electron;    Photoluminescence investigation;    Photoluminescence spectrum;    Sapphire substrates;    Transition level;    Visible spectral range;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/864/1/012071/pdf
DOI  :  10.1088/1742-6596/864/1/012071

来源: IOP

【 摘 要 】

We report photoluminescence investigations of heavily doped AlxGa1-xN:Si films grown by molecular beam epitaxy on sapphire substrates. The wide intensive defect-related band dominates in the photoluminescence spectra of AlxGa1-xN:Si films with the Al content higher than 0.38 covering the whole visible spectral range. This band is attributed to donor-acceptor and free electron-acceptor transitions involving the same acceptor. The acceptor ionization energy of about 1.87 eV for heavily doped AlN:Si was obtained, decrease of Al content leads to decrease of the acceptor ionization energy. The donor was assigned to the Si atom on the Ga/Al site; the acceptor might be (0/-) transition level of the CNor (2-/3-) transition level of the VAl.