Research progress on the calculation of carrier mobility for two-dimensional Dirac material

2018 International Conference on Advanced Materials, Intelligent Manufacturing and Automation

材料科学;机械制造;运输工程

Yu, Sang^1

School of Civil Engineering, Chang'An University, Xi'an, Shanxi

710061, China^1

关键词: Deformation potential theory;    Integrated device;    Science and Technology;    Special properties;    Theoretical calculations;    Theoretical development;    Tight binding model;    Two-dimensional materials;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/382/2/022012/pdf
DOI  :  10.1088/1757-899X/382/2/022012

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

With the development of integrated devices in the direction of increasingly miniaturization, from the end of the last century, computing, communications, automatic control and other aspects of science and technology expressed the urgent expection of new materials. With the discovery of graphene, the study of two-dimensional material system began to reveal new vitality. The special properties of these two-dimensional materials are often related to the carrier mobility. Therefore, studying how to calculate the carrier mobility of two-dimensional materials, especially the Dirac materials, is of double significance for theoretical calculation and application of nanomaterials. In this paper, the theoretical development of the two-dimensional Dirac material mobility is studied in detail. This paper summarizes the commonly used methods and principles in theoretical calculations of materials, including Bloch's theorem and Density functional theory. The main methods for calculating carrier mobility in two-dimensional materials are introduced in detail, namely Tight-binding models and deformation potential theory.