Strain Effects on Band Structure of Wurtzite InGaN/GaN Quantum Well on Si Substrate

International Conference on Materials Science and Technology 2012

Jana, S.K.^1 ; Ghosh, S.^1 ; Dinara, S.M.^1 ; Das, T.D.^1 ; Biswas, D.^2

Advanced Technology Development Centre, Indian Institute of Technology, Kharagpur

721302, India^1

Department of Electronics and Electrical Communication Engineering, Indian Institute of Technology, Kharagpur

721302, India^2

关键词: Anisotropic strain;    Deformation potential;    GaN-quantum wells;    Heteroepitaxial;    InGaN/GaN quantum well;    Strain effect;    Visible and ultraviolet;    Wurtzite InGaN;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/73/1/012151/pdf
DOI  :  10.1088/1757-899X/73/1/012151

来源: IOP

【 摘 要 】

Heteroepitaxial crystal growth of InGaN/GaN Quantum Well (QW) on Si substrate is necessary for the development of visible and ultraviolet (UV) Light Emitting Diodes (LEDs). In this work we accumulate the efforts that have been made to focus the analysis of strain effects on the band structure of GaN quantum well systems on Si substrate due to its potential application. We limit this investigation on the effect of pseudomorphic GaN quantum wells on Si substrate grown at different GaN planes. It is observed that the deformation potential constants and anisotropic strain separate Heavy Hole (HH) and Light Hole (LH) band and eventually making LH the top most bands.