Acceptor states and carrier lifetime in heteroepitaxial HgCdTe-on-Si for mid-infrared photodetectors

2nd International School and Conference Saint-Petersburg OPEN on Optoelectronics, Photonics, Engineering and Nanostructures

Zablotsky, S.V.^1,2 ; Bazhenov, N.L.^1 ; Mynbaev, K.D.^1,3 ; Yakushev, M.V.^4 ; Marin, D.V.^4 ; Varavin, V.S.^4 ; Dvoretsky, S.A.^4

Ioffe Institute, Saint-Petersburg

194021, Russia^1

Saint Petersburg Electrotechnical University LETI, Saint-Petersburg

197376, Russia^2

ITMO University, Saint-Petersburg

197101, Russia^3

Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk

630090, Russia^4

关键词: Acceptor state;    Epilayers grown;    Heteroepitaxial;    Mid-infrared photodetectors;    Photoluminescence spectrum;    Recombination centres;    Si substrates;    Temperature dependence;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/643/1/012004/pdf
DOI  :  10.1088/1742-6596/643/1/012004

来源: IOP

【 摘 要 】

Temperature dependences of the carrier lifetime and photoluminescence (PL) spectra in Hg1-xCdxTe (0.3 +-n photodiodes have been studied. It is shown that the as-grown material has a high concentration of recombination centres with energy 30 ÷ 40 meV, which reduces the lifetime. The post-growth annealings, both that converting the material to the p-type and that imitating the activation of an implanted impurity, reduce the concentration of the centres. This manifests itself in an increase in the lifetime, which is especially noticeable after 'activating' annealing and is confirmed by results of the PL studies.