Effect of a wideband heteroepitaxial emitter on dynamics of turn-off switching of high-voltage power GaAs p-i-n diodes

17th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics

Lebedeva, N.M.^1 ; Kozlov, V.A.^2 ; Soldatenkov, F Yu^1,2 ; Usikova, A.A.^1

Ioffe Physical-Technical Institute, 26 Politekhnicheskaya str., St. Petersburg

194021, Russia^1

Power Semiconductors Ltd., 27 Gzhatskaya str., St. Petersburg

195220, Russia^2

关键词: Blocking voltage;    Diode blocking;    Dynamic characteristics;    Heteroepitaxial;    High voltage power;    ON dynamics;    Reverse recovery time;    Turn offs;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/690/1/012038/pdf
DOI  :  10.1088/1742-6596/690/1/012038

来源: IOP

【 摘 要 】

The possibility of improving the dynamic characteristics of turn-off switching of high-voltage power GaAs p-i-n diode by applying a heteroepitaxial AlGaAs emitter is investigated in this work. Using a wideband AlGaAs n+-emitter in manufacturing of power GaAs p-i-n diodes allows to vary the coefficient K value which characterizes the recovery softness of diode blocking properties when switching off in the range of 0.1 to 2 or more. The diodes with blocking voltage of up to 700 V, the reverse recovery time of about 40 ns and K > 1 were manufactured.