GaAs- A3B5 heterostructures for high-speed power diodes manufacturing

17th Russian Youth Conference on Physics and Astronomy

物理学;天文学

Soldatenkov, F.Yu.^1,2 ; Kozlov, V.A.^1,2 ; Shulpina, I.L.^1 ; Ivanovskiy, V.I.^3

Ioffe Physical-Technical Institute, Politekhnicheskaya 26, St. Petersburg

194021, Russia^1

Power Semiconductors Ltd., Gzhatskaya 27, St. Petersburg

195220, Russia^2

Saint Petersburg State Electrotechnical University (LETI), ul. Professora Popova 5, St. Petersburg

197376, Russia^3

关键词: Defect formation;    Diode structure;    Dynamic switching;    GaAs substrates;    Heteroepitaxial;    Heteroepitaxial layers;    Non-equilibrium carriers;    Structural defect;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/661/1/012066/pdf
DOI  :  10.1088/1742-6596/661/1/012066

学科分类：天文学(综合)

来源: IOP

【 摘 要 】

Physical basis of using the controlled defect formation in InGaAs heteroepitaxial layers to vary the carrier lifetime is considered. It is shown that the lifetime of nonequilibrium carriers in the base layers of a diode can be controllably varied from several to hundreds of nanoseconds. The results obtained in a study of (i) structural defects and their rearrangement related to the lattice mismatch between the heteroepitaxial InGaAs layer and the GaAs substrate and (ii) influence exerted by these defects on the carrier lifetime and on the voltage blocked by diode structures are reported. Dynamic switching characteristics of high-speed power heteroepitaxial diodes at different temperatures are presented.